Thermal Analysis and Measurement of Electron Devices Research

Thermal Modeling and Measurement of AlGaN/GaN HFETs Built on Sapphire and SiC Substrates

 

Thermal model of a five layer structure with a heat source layout

 

The unit thermal source generate unit thermal profile with 1mm diameter

The computation of the thermal profile produced by the 2mm by 6mm source is reduced to simple summation of 12 unit thermal profile

 

 

Physical structure of an AlGaN/GaN HFET device

 

              

Thermal measurement set up with liquid crystal

 

Calculated and measured peak temperatures for device on sapphire substrate

 

 

Calculated and measured peak temperatures for device on SiC substrate